K. Kusakabe et al., Reduction of threading dislocations in migration enhanced epitaxy grown GaN with N-polarity by use of AlN multiple interlayer, J CRYST GR, 230(3-4), 2001, pp. 387-391
High quality GaN layer was obtained by insertion of high temperature grown
AIN multiple intermediate layers with migration enhanced epitaxy method by
the RF-plasma assisted molecular beam epitaxy on (0001) sapphire substrates
. The propagating behaviors of dislocations were studied, using a transmiss
ion electron microscope. The results show that the edge dislocations were f
iltered at the AlN/GaN interfaces. The bending propagation of threading dis
locations in GaN above AIN interlayers was confirmed. Thereby, further redu
ction of dislocations was achieved. Dislocation density being reduced, the
drastic increase of electron mobility to 668 cm(2)/V s was obtained at the
carrier density of 9.5 x 10(16)cm(-3) in Si doped GaN layer. (C) 2001 Elsev
ier Science B.V. All rights reserved.