A structural study of phase transitions within GaN layers grown by low-temperature molecular beam epitaxy

Authors
Marlafeka, S Bock, N Cheng, TS Novikov, SV Winser, AJ Harrison, I Foxon, CT Brown, PD
Citation
S. Marlafeka et al., A structural study of phase transitions within GaN layers grown by low-temperature molecular beam epitaxy, J CRYST GR, 230(3-4), 2001, pp. 415-420
Citations number
16
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
230
Issue
3-4
Year of publication
2001
Pages
415 - 420
Database
ISI
SICI code
0022-0248(200109)230:3-4<415:ASSOPT>2.0.ZU;2-9
Abstract
The epitaxial growth of GaN layers on sapphire substrates by molecular beam epitaxy at low temperatures (500 degreesC) has been investigated. Samples exhibited a transition from hexagonal to mixed hexagonal/cubic phase under conditions of increasing Ga flux as determined using a TEM-RHEED technique with complementary SEM and PL observations. Embedded cubic grains adopted t wo domain variants with additional evidence for twinning. (C) 2001 Elsevier Science B.V. All rights reserved.