Citation
R. Xia et al., Spectrally resolved electroluminescence microscopy and mu-electroluminescence investigation of GaN-based LEDs, J CRYST GR, 230(3-4), 2001, pp. 467-472
Citations number
12
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248
→ ACNP
Volume
230
Issue
3-4
Year of publication
2001
Pages
467 - 472
Database
ISI
SICI code
0022-0248(200109)230:3-4<467:SREMAM>2.0.ZU;2-X
Abstract
We have studied the luminescence properties of GaN LEDs by electroluminesce
nce microscopy (ELM) and micro-electroluminescence (mu -EL) spectroscopy. S
patial inhomogeneity in the deep level region of the spectra is observed in
spectrally resolved ELM images. Room temperature mu -EL spectra measured f
rom 5 x 5 mum(2) regions show anticorrelation of the defect-related recombi
nation (E = 1.95-2.45 eV) with the band-edge emission (E = 3.18 eV). (C) 20
01 Elsevier Science B.V. All rights reserved.