GaN-based lasers on SiC: influence of mirror reflectivity on L-I characteristics

Citation
V. Schwegler et al., GaN-based lasers on SiC: influence of mirror reflectivity on L-I characteristics, J CRYST GR, 230(3-4), 2001, pp. 512-516
Citations number
9
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
230
Issue
3-4
Year of publication
2001
Pages
512 - 516
Database
ISI
SICI code
0022-0248(200109)230:3-4<512:GLOSIO>2.0.ZU;2-3
Abstract
The influence of the mirror reflectivity on the L-I characteristics of GaN- based lasers has been studied. A cleaved, Al-coated fiber is used as an ext ernal micro-mirror to control the reflectance of the end facets allowing fo r a continuous adjustment of mirror losses of a particular laser. In contra st to other methods, this eliminates all ambiguities usually arising from t he comparison of different or differently coated devices. An increase in th e single facet external quantum efficiency by 45% is observed for uncoated lasers and simultaneously, the threshold current is reduced by 12%. Interna l losses of approximately 20-30 cm(-1) are derived from the differential qu antum efficiency variation depending on the particular device under investi gation. (C) 2001 Elsevier Science B.V. All rights reserved.