Analysis of the threshold current in nitride-based lasers

Citation
A. Hangleiter et al., Analysis of the threshold current in nitride-based lasers, J CRYST GR, 230(3-4), 2001, pp. 522-526
Citations number
11
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
230
Issue
3-4
Year of publication
2001
Pages
522 - 526
Database
ISI
SICI code
0022-0248(200109)230:3-4<522:AOTTCI>2.0.ZU;2-D
Abstract
Using optical gain measurements and calculated optical gain spectra we anal yse the various contributions to the threshold current observed for laser d iodes. Our model is based on band-to-band transitions and includes internal polarization fields as well as multiple quantum wells. Besides good agreem ent between experiment and theory, our model explains the characteristic de pendence of the threshold current on emission wavelength and well number. ( C) 2001 Elsevier Science B.V. All rights reserved.