Citation
Aj. Winser et al., Blue emission from arsenic doped gallium nitride, J CRYST GR, 230(3-4), 2001, pp. 527-532
Citations number
20
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248
→ ACNP
Volume
230
Issue
3-4
Year of publication
2001
Pages
527 - 532
Database
ISI
SICI code
0022-0248(200109)230:3-4<527:BEFADG>2.0.ZU;2-2
Abstract
We have observed strong blue emission at room temperature from arsenic dope
d GaN samples grown by molecular beam epitaxy. Similar results were obtaine
d for samples doped with both arsenic dimers and tetramers. The origin of t
his blue emission is discussed and a growth model proposed to account for o
ur observations. We propose that arsenic doped GaN may be a suitable replac
ement for (InGa)N as the active region for blue light emitting devices. (C)
2001 Elsevier Science B.V. All rights reserved.