Y. Nosaka et al., ELECTRON-SPIN ECHO INVESTIGATION FOR RADICALS PRODUCED ON ZNS SEMICONDUCTOR PHOTOCATALYSTS, Chemistry Letters, (7), 1997, pp. 661-662
Pulsed electron spin resonance technique was applied to the investigat
ion into radicals formed on photo-irradiated ZnS semiconductor powder.
From the decay profile of the signal intensity of electron spin echo,
the spin relaxation times for surface holes and S-n radicals were mea
sured to be 1.2 and 6 mu s, respectively.