The growth of Si1-x-yGexCy alloys with high carbon content by ultra-high vacuum chemical vapor deposition

Authors
Huang, JY Ye, ZZ Qi, ZL Que, D
Citation
Jy. Huang et al., The growth of Si1-x-yGexCy alloys with high carbon content by ultra-high vacuum chemical vapor deposition, J MAT SCI L, 20(12), 2001, pp. 1173-1175
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS SCIENCE LETTERS
ISSN journal
02618028 → ACNP
Volume
20
Issue
12
Year of publication
2001
Pages
1173 - 1175
Database
ISI
SICI code
0261-8028(2001)20:12<1173:TGOSAW>2.0.ZU;2-6