This paper reports on three different position sensitive detector (PSD) str
uctures based on rf sputter deposited amorphous silicon. Most of the work r
eported by other researchers on thin-film PSDs has been based on plasma enh
anced chemical vapour deposition p-i-n structures but the structures in thi
s work are based on much simpler fabrication procedures. The results show e
xcellent sensitivities and linearities and work extremely well under unbias
ed conditions. To assess the wavelength response of the devices they were c
ompared under red and white light beams. The performances under red light w
ere unremarkable while under white they were very good, showing high sensit
ivities and linearities. The devices work best under unbiased conditions an
d so are simple to configure for practical applications. The outputs obtain
ed required no amplification.