Gamma-ray irradiation effects on Fourier transform infrared grazing incidence reflection-absorption spectra of GaN films

Authors
Sun, WH Zhang, JC Dai, L Chen, KM Qin, GG
Citation
Wh. Sun et al., Gamma-ray irradiation effects on Fourier transform infrared grazing incidence reflection-absorption spectra of GaN films, J PHYS-COND, 13(26), 2001, pp. 5931-5936
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS-CONDENSED MATTER
ISSN journal
09538984 → ACNP
Volume
13
Issue
26
Year of publication
2001
Pages
5931 - 5936
Database
ISI
SICI code
0953-8984(20010702)13:26<5931:GIEOFT>2.0.ZU;2-I
Abstract
We have studied the effects of gamma-ray irradiation on the Fourier transfo rm infrared grazing incidence reflection-absorption spectra of GaN films gr own on alpha -Al2O3 (0001) substrates using metal-organic chemical vapour d eposition at atmospheric pressure. After irradiation, the spectral intensit y increased markedly and a series of new absorption features appeared, amon g which those at 3440, 3355, 3174, 3088, 2819, 2712, 2100, 1426 and 894 cm( -1) are discussed and identified. The reason why gamma-ray irradiation can enhance the intensity and give rise to these new features is also discussed .