Evaluations of the low-field mobility in degenerate GaN/AlN heterojunctions

We solve the linearized Boltzmann equation for a degenerate quasi-two-dimen sional electron system confined to a triangular quantum well at a III nitri de heterojunction and interacting only with the polar optical phonons. The method of solution makes use of a ladder technique, and employs the Fang-Ho ward approximation for the description of the confined electrons. The varia tions of the effective-momentum relaxation time with the electron energy, a nd of the mobility with electron density are presented for a GaN/AlN hetero junction.