Trapping of vacancies by defects in diamond

Citation
K. Iakoubovskii et Gj. Adriaenssens, Trapping of vacancies by defects in diamond, J PHYS-COND, 13(26), 2001, pp. 6015-6018
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS-CONDENSED MATTER
ISSN journal
09538984 → ACNP
Volume
13
Issue
26
Year of publication
2001
Pages
6015 - 6018
Database
ISI
SICI code
0953-8984(20010702)13:26<6015:TOVBDI>2.0.ZU;2-F
Abstract
Optical absorption measurements were performed on irradiated diamonds conta ining different concentrations of nitrogen defects. Analysis of the results suggests that the single substitutional nitrogen centres trap vacancies ab out eight times more efficiently than the substitutional nitrogen pairs. In irradiated diamond crystals with a low impurity content, as well as in syn thetic diamond films, an undocumented IR spectrum is observed and ascribed to intrinsic defects.