Vibrational properties of SnGeS3 under high pressure

Citation
K. Inoue et al., Vibrational properties of SnGeS3 under high pressure, J PHYS JPN, 70(7), 2001, pp. 2168-2174
Citations number
12
Categorie Soggetti
Physics
Journal title
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN
ISSN journal
00319015 → ACNP
Volume
70
Issue
7
Year of publication
2001
Pages
2168 - 2174
Database
ISI
SICI code
0031-9015(200107)70:7<2168:VPOSUH>2.0.ZU;2-S
Abstract
We measured Raman spectra of SnGeS3 single crystal under hydrostatic pressu re up to 19.5 GPa. Fourteen of the seventeen modes observed at low pressure s disappear around 7 GPa. The remaining three modes persist up to 11.5 GPa. No scattering activity is found above 19.5 GPa. All these changes, as well as color changes, are reversible. The intensities of the Raman modes of Sn GeS3 were calculated using valence-force-field and a bond polarizability mo del. Ve have shown that the interchain interaction is responsible for the i ntensity exchange of 346 cm(-1) and 364.5 cm(-1) modes under pressure. An a ssignment to internal and external modes is also proposed.