Photoreactivity of alkylsiloxane self-assembled monolayers on silicon oxide surfaces

Citation
T. Ye et al., Photoreactivity of alkylsiloxane self-assembled monolayers on silicon oxide surfaces, LANGMUIR, 17(15), 2001, pp. 4497-4500
Citations number
32
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
LANGMUIR
ISSN journal
07437463 → ACNP
Volume
17
Issue
15
Year of publication
2001
Pages
4497 - 4500
Database
ISI
SICI code
0743-7463(20010724)17:15<4497:POASMO>2.0.ZU;2-Q
Abstract
We have combined contact angle measurements, Fourier transform infrared spe ctroscopy (FT-IR), and atomic force microscopy (AFM) to investigate the UV photoreactivity of octadecylsiloxane (ODS) SAMs (self-assembled monolayers) in air. Contact angle measurements present evidence that ozone is not the active agent in alkylsiloxane SAM degradation under UV illumination in air. A combination of UV and oxygen is necessary for monolayer degradation to p roceed. AFM measurements on submonolayer coverage SAMs provide direct evide nce of the photodegradation of ODS SAMs and reveal the role of defects in t he degradation process. FT-IR and AFM results suggest that the hydrocarbon chain is the reactive site of the monolayers. A microscopic mechanism of th e photoreactivity involving hydrogen abstraction is suggested based on the mechanism of gas-phase oxidation of alkanes. Our results have implications in clarifying the contribution from the reactivity of alkyl chains during t he photomodification of SAMs. This clarification may provide insight into o ptimization of the SAM photopatterning processes.