Monte Carlo simulation of harmonic generation in InP

Harmonics spectra in an n-type InP bulk semiconductor showing up to the 13t h harmonic are reported. The external field is linearly polarized with the frequency v = 100 GHz. Calculations are based on a Monte Carlo simulation f or the electron motion in the conducting band and on an electrodynamics equ ation for the harmonics generation. The effect of a significant reduction o f efficiency in the generation of particular harmonics is found, and is tra ced back to a sort of alternating field Gunn effect. A short analysis of th e different physical mechanisms giving rise to harmonics generation is pres ented.