A Fourier spectrometry method for measuring the thickness of thin and ultra
thin films with the help of an additional peak that depends on the optical
thickness of the deposited film and is situated outside the region of the c
entral peak of the interferogram is proposed. The experiment demonstrates t
he necessity of considering the change in optical path in the substrate tha
t is induced by the deposited film. (C) 2001 MAIK "Nauka/Interperiodica".