Second harmonic generation in layered TlInS2 in the vicinity of the low-temperature phase transitions

Citation
K. Allakhverdiev et al., Second harmonic generation in layered TlInS2 in the vicinity of the low-temperature phase transitions, PHASE TRAN, 73(4), 2001, pp. 579-588
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHASE TRANSITIONS
ISSN journal
01411594 → ACNP
Volume
73
Issue
4
Year of publication
2001
Part
A
Pages
579 - 588
Database
ISI
SICI code
0141-1594(2001)73:4<579:SHGILT>2.0.ZU;2-O
Abstract
Second-harmonic generation in the ternary layered semiconductor T1InS(2) ex cited with the wavelength lambda = 1.06 mum of YAG:Nd3+ laser is investigat ed in the temperature range corresponding to the low-temperature phase tran sitions. It is shown that the intensity of the second-harmonic signal corre sponding to the non-linear coefficients d(eff), d(21), d(22) reveals peculi arities close to the commensurate-incommensurate phase transitions. The tem perature hysteresis of the second-harmonic signal in the low-temperature re gion (below and close to T-i2=206K) is explained assuming that an incomplet e lock-in transition in T1InS2 takes place at T-c1 = 204 K within the tempe rature range between a ferroelectric (T-c2 = 201 K) and an incommensurate ( T-i2 = 206 K) phases. II is shown that the monoclinic point group symmetry Ca is preserved also at temperatures lower than the phase transition temper ature T-c4 = 79K to a weak ferroelectric state.