Frequency-resolved photocurrent measurements were carried out on amorphous
As-Se-Sb films as a function of temperature (between 230 and 395K) and of e
xcitation intensity (between 40 and 600 muW), yielding the lifetime distrib
ution directly. Since the lifetime does depend on the excitation intensity,
the results indicate that the recombination is through distant pairs, rath
er than by geminate (twin) pairs.