Excitons and band structure of highly anisotropic GaTe single-crystals - art. no. 035210

Exciton characteristics of GaTe single crystals grown by vapor-phase transp ort were studied by,optical measurements. A hydrogenlike exciton series up to n=4 was clearly observed in the absorption spectra at 2 K. In the n=1 ex citon energy region three types of exciton lines were found. By analyzing m icrophotoluminescence and micro-Raman-scattering spectra on the basis of gr oup theory, it was clarified that these exciton lines are not due to differ ent polytypes but to intrinsic exciton states. Furthermore, optical-absorpt ion spectra in a magnetic field at 4.2 K were measured. In the Voigt config uration, one and two components for E parallel tob and E perpendicular tob polarizations, respectively, were observed in the n = 1 and 2 exciton lines . These magnetic-field dependencies cannot be interpreted on the basis of t he previously proposed L-S coupling regime. The electronic band structure o f GaTe was studied by the ab initio tight-binding linear muffin-tin orbital s method. It was found that GaTe is a direct-gap semiconductor and that the band edge is located at an M point of the Brillouin zone. From a compariso n df exciton absorption spectra and the calculated band structure, the exis tence of the three types of excitons was interpreted from the viewpoint of j-j coupling. Our model calculation Was also able to explain the Zeeman spl itting and the diamagnetic shift of the exciton peak energies.