Spatial carrier-carrier correlations in strain-induced quantum dots - art.no. 035312

The electron-hole correlation effects on the energy levels and the wave fun ctions of the electrons and holes in a strain-induced quantum dot containin g one to ten carrier pairs have been studied using large-scale configuratio n-interaction calculations. The present calculations show the formation of excitons and biexcitons in the quantum dot. By increasing the number of car rier pairs, one observes a transition from a strongly correlated system to a quantum dot system for which the electron-electron and hole-hole correlat ions are dominated by exchange interaction and are relatively well describe d at the Hartree-Fock level, while for an accurate description of the elect ron-hole correlations configuration-interaction calculations are necessary. Ring-shaped carrier distributions emerge with increasing number of carrier pairs.