A low-voltage Floating-Gate MOS biquad

Citation
Eo. Rodriguez-villegas et al., A low-voltage Floating-Gate MOS biquad, VLSI DESIGN, 12(3), 2001, pp. 407-414
Citations number
21
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
VLSI DESIGN
ISSN journal
1065514X → ACNP
Volume
12
Issue
3
Year of publication
2001
Pages
407 - 414
Database
ISI
SICI code
1065-514X(2001)12:3<407:ALFMB>2.0.ZU;2-D
Abstract
A second-order g(m)-C filter based on the Floating-Gate MOS (FGMOS) techniq ue is presented. It uses a new fully differential transconductor and works at 2 V of voltage supply with a full differential input linear range and a THD below 1%. Programming and tuning are performed by means of a single vol tage signal. The transconductor incorporates a novel Common-Mode Feedback C ircuit (CMFB) based also on FGMOS transistors.