Temperature-dependent measurement of Auger recombination in self-organizedIn0.4Ga0.6As/GaAs quantum dots

We report experimental studies of temperature-dependent Auger recombination coefficients in self-assembled quantum dots. The results are based on a st udy of temperature-dependent large signal modulation experiments made on se lf-organized In0.4Ga0.6As/GaAs quantum dot lasers. The Auger coefficient de creases from similar to 8x10(-29) cm(6)/s at 100 K to similar to 4x10(-29) cm(6)/s at 300 K. This behavior, which is different from results in other h igher-dimensional systems, is explained in terms of the temperature depende nce of electron-hole scattering in the dots and contribution from higher ly ing states in the dot and adjoining layers. (C) 2001 American Institute of Physics.