Role of adsorption kinetics in the low-temperature Si growth by gas-sourcemolecular beam epitaxy: In situ observations and detailed modeling of the growth
T. Murata et al., Role of adsorption kinetics in the low-temperature Si growth by gas-sourcemolecular beam epitaxy: In situ observations and detailed modeling of the growth, APPL PHYS L, 79(6), 2001, pp. 746-748
The growth rate and surface hydrogen coverage during Si gas-source molecula
r beam epitaxy using disilane have been obtained as functions of both the g
rowth temperature and the source-gas pressure. The activation energy of the
low-temperature (< 600 degreesC) growth rate was found to increase with th
e source-gas pressure, indicating a contribution by the adsorption process
in these low-temperature growth kinetics. Several growth models have been c
onstructed based on the results, among which the two-site/four-site-adsorpt
ion model [M. Suemitsu , Jpn. J. Appl. Phys., Part 2 36, L625 (1997)] showe
d the best fit to both the growth rate and the hydrogen coverage. (C) 2001
American Institute of Physics.