Effect of hydrogenation on Al-related photoluminescence in 6H-SiC

Interaction of hydrogen with Al acceptors in SiC is investigated using low- temperature photoluminescence (PL) spectroscopy. Hydrogenation is performed in hydrogen plasma using a standard inductively coupled plasma etching sys tem. Appearance of H-related PL peaks after hydrogenation is accompanied wi th a significant reduction in relative intensity of Al bound exciton (Al-BE ) PL. A gradual quenching of the remaining Al-BE photoluminescence is obser ved in hydrogenated samples under excitation with above band gap light, res ulting in a complete disappearance of Al-BE PL emission. High-temperature a nnealing completely restores the shape of the PL spectrum to its prehydroge nation form. (C) 2001 American Institute of Physics.