H. Nakazawa et M. Suemitsu, Low-temperature formation of an interfacial buffer layer using monomethylsilane for 3C-SiC/Si(100) heteroepitaxy, APPL PHYS L, 79(6), 2001, pp. 755-757
By using monomethylsilane (MMS:H3Si-CH3), we have formed a Si1-xCx interfac
ial buffer layer for 3C-SiC/Si(100) heteroepitaxy at substrate temperature
T-f of as low as 450-650 degreesC, which is compared to the conventional ca
rbonization temperature of 900 degreesC or higher. The buffer layer allows
the subsequent growth of high-quality single-crystalline 3C-SiC films at 90
0 degreesC without formation of voids in the Si substrate at the interface.
The grown 3C-SiC films degrade for T-f< 450 or > 650 degreesC. The low pro
cessing temperature as well as the suppressed Si outdiffusion can be relate
d to the inclusion of both Si-H and Si-C bonds within the MMS molecule. (C)
2001 American Institute of Physics.