Citation
F. Amy et al., Si/6H-SiC(0001): An unexpected cubic 4x3 Si phase overlayer, APPL PHYS L, 79(6), 2001, pp. 767-769
Citations number
24
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951
→ ACNP
Volume
79
Issue
6
Year of publication
2001
Pages
767 - 769
Database
ISI
SICI code
0003-6951(20010806)79:6<767:SAUC4S>2.0.ZU;2-J
Abstract
We investigate Si deposition on the 6H-SiC(0001) 3x3 surface reconstruction
by atom-resolved scanning tunneling microscopy. Upon thermal annealing, th
e Si thin film forms an unexpected structure having dimer rows in a cubic 4
x3 surface array. Such a 4x3 Si phase has a very open surface very likely b
eing at the origin of the exceptionally high reactivity to oxygen of the Si
/6H-SiC(0001) system. These findings are relevant in silicon carbide oxidat
ion. (C) 2001 American Institute of Physics.