Domain wall pinning on strain relaxation defects in FePt(001)/Pt thin films

Citation
Jp. Attane et al., Domain wall pinning on strain relaxation defects in FePt(001)/Pt thin films, APPL PHYS L, 79(6), 2001, pp. 794-796
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
6
Year of publication
2001
Pages
794 - 796
Database
ISI
SICI code
0003-6951(20010806)79:6<794:DWPOSR>2.0.ZU;2-L
Abstract
Thin FePt (001) films, grown by molecular-beam epitaxy on Pt(001), exhibit a very large perpendicular magnetic anisotropy (K-u=5x10(6) J m(-3)) and a 100% magnetic remanence in perpendicular field. The lattice misfit between FePt and Pt (1.5%) relaxes through the pileup of a/6 < 112 > partial disloc ations along {111} planes, leading to the formation of microtwins. Atomic f orce microscopy images demonstrate that this process induces a spontaneous rectangular nanostructuration of the sample, while magnetic force microscop y shows that the microtwins act as pinning sites for the magnetic walls. Th is leads to square magnetic domains and explains the large coercivity assoc iated with the domain wall propagation. (C) 2001 American Institute of Phys ics.