Investigation of Li-doped ferroelectric and piezoelectric ZnO films by electric force microscopy and Raman spectroscopy

Authors
Ni, HQ Lu, YF Liu, ZY Qiu, H Wang, WJ Ren, ZM Chow, SK Jie, YX
Citation
Hq. Ni et al., Investigation of Li-doped ferroelectric and piezoelectric ZnO films by electric force microscopy and Raman spectroscopy, APPL PHYS L, 79(6), 2001, pp. 812-814
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
6
Year of publication
2001
Pages
812 - 814
Database
ISI
SICI code
0003-6951(20010806)79:6<812:IOLFAP>2.0.ZU;2-9
Abstract
We have grown Li-doped ZnO films on silicon (100) using the rf planar magne tron sputtering method. The surface charges induced piezoelectrically by de fect and by polarization can be observed by electric force microscopy. The Li-doped ZnO films have been proven to be ferroelectric. The Raman spectra of ZnO and Li-doped ZnO films have been measured. (C) 2001 American Institu te of Physics.