Schottky barrier rectifier with high current density using vanadium as barrier metal

This letter reports on an improved forward voltage drop (V-F) and reverse l eakage current (I-R) in Schottky barrier rectifier using vanadium (V-SBR) a s the barrier metal with a low barrier height (phi (B)) and argon implantat ion. The V-F for a V-SBR was as low as 0.25 V compared to 0.39 V for a moly bdenum (Mo)-SBR at the same forward current density (J(F)) of 60 A/cm(2). T his study was able to achieve a good result for J(F) in SBR. Presently, the conventional Schottky rectifier with a low phi (B) metal is used to achiev e low V-F, but at the expense of a high I-R. To reduce this effect, crystal line Si was altered into amorphous Si using argon implantation on the n-epi taxial layer. Finally, a SBR with a high J(F) and low I-R could be fabricat ed. (C) 2001 American Institute of Physics.