A computational study of the mechanism for self-assembly of N-pyrrolyl radicals on Si(100)-2 x 1

Authors
Citation
Hb. Luo et Mc. Lin, A computational study of the mechanism for self-assembly of N-pyrrolyl radicals on Si(100)-2 x 1, CHEM P LETT, 343(3-4), 2001, pp. 219-224
Citations number
17
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
CHEMICAL PHYSICS LETTERS
ISSN journal
00092614 → ACNP
Volume
343
Issue
3-4
Year of publication
2001
Pages
219 - 224
Database
ISI
SICI code
0009-2614(20010803)343:3-4<219:ACSOTM>2.0.ZU;2-Q
Abstract
We predict the structures and energies for the dissociative adsorption of p yrrole producing C4H4N radicals and H atoms on the Si(100)-2 x 1 surface by density functional cluster model calculations. The dissociative adsorption process was found to occur primarily by barrierless adsorption at an alpha -C atom followed by N-H dissociation and the isomerization of the radical, leading to the formation of aligned C4H4N species on the surface. Addition ally, molecular adsorption reactions by [2+2] and [4+2] cycloaddition mecha nisms are discussed. These cyclic adducts were predicted to be short-lived at room temperature and should not affect the formation of the aligned C4H4 N radical layer. (C) 2001 Published by Elsevier Science B.V.