K. Arushanov et al., NEGATIVE MAGNETORESISTANCE IN P-TYPE BETA-FESI2 SINGLE-CRYSTALS IN 2 REGIMES OF VARIABLE-RANGE-HOPPING, Physical review. B, Condensed matter, 56(3), 1997, pp. 1005-1008
Single crystals of p-type beta-FeSi2 demonstrate the negative magnetor
esistance below 40 K that increases with decreasing temperature and do
es not reach either a maximum or a saturation up to at least 12 kOe. T
his effect is observed in both the Mott and the Shklovskii-Efros varia
ble-range hopping regimes. At fields below approximately 3-5 kOe (depe
nding on the temperature) the magnetoresistance displays a quadratic d
ependence on the magnetic field, while at higher fields the dependence
is linear. The experimental data are analyzed using two different app
roaches to the interference effects in hopping conductivity in a magne
tic field.