STRUCTURAL MODEL FOR THE SI(111)-4X1-IN RECONSTRUCTION

Authors
SARANIN AA ZOTOV AV IGNATOVICH KV LIFSHITS VG NUMATA T KUBO O TANI H KATAYAMA M OURA K
Citation
Aa. Saranin et al., STRUCTURAL MODEL FOR THE SI(111)-4X1-IN RECONSTRUCTION, Physical review. B, Condensed matter, 56(3), 1997, pp. 1017-1020
Citations number
30
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
56
Issue
3
Year of publication
1997
Pages
1017 - 1020
Database
ISI
SICI code
0163-1829(1997)56:3<1017:SMFTSR>2.0.ZU;2-Z
Abstract
A pi-bonded-chain-stacking-fault (pi-SF) model is proposed for the Si( lll)4x1-In surface structure. The model incorporates 4x1 Si(111) subst rate reconstruction consisting of the sixfold Si rings in the faulted- unfaulted sequence connected through fivefold and sevenfold Si rings. Indium atoms (0.75 ML) reside above sixfold and fivefold Si rings whil e sevenfold Si rings form pi-bonded chains between In ridges.