PHOTOVOLTAIC STUDY OF ZNSE GAAS HETEROSTRUCTURES/

Citation
Jb. Wang et al., PHOTOVOLTAIC STUDY OF ZNSE GAAS HETEROSTRUCTURES/, Physical review. B, Condensed matter, 56(3), 1997, pp. 1416-1421
Citations number
9
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
56
Issue
3
Year of publication
1997
Pages
1416 - 1421
Database
ISI
SICI code
0163-1829(1997)56:3<1416:PSOZGH>2.0.ZU;2-W
Abstract
The ZnSe/GaAs heterojunctions formed by epitaxially grown ZnSe thin fi lms on S-treated GaAs substrates are characterized by the photovoltaic measurements. By analyzing the photovoltaic spectra obtained at diffe rent temperatures, the broad-band photovoltaic signal is assigned to t he cross-band photon-absorption transitions between the valence band o f GaAs and the conduction band of ZnSe near the heterointerface. The b and alignment of the ZnSe/S-GaAs heterojunction is determined to be of a type-II configuration with a conduction-band offset of 168 meV at r oom temperature.