PHOTOVOLTAIC STUDY OF ZNSE GAAS HETEROSTRUCTURES/

The ZnSe/GaAs heterojunctions formed by epitaxially grown ZnSe thin fi lms on S-treated GaAs substrates are characterized by the photovoltaic measurements. By analyzing the photovoltaic spectra obtained at diffe rent temperatures, the broad-band photovoltaic signal is assigned to t he cross-band photon-absorption transitions between the valence band o f GaAs and the conduction band of ZnSe near the heterointerface. The b and alignment of the ZnSe/S-GaAs heterojunction is determined to be of a type-II configuration with a conduction-band offset of 168 meV at r oom temperature.