EFFECT OF VERTICAL TRANSPORT ON SUPERLATTICE LUMINESCENCE IN THE PRESENCE OF AN INPLANE MAGNETIC-FIELD

The effect of the vertical transport of carriers on the luminescence f rom a GaAs/Ga1-xAlxAs superlattice (SL) in the presence of a magnetic field is studied both experimentally and theoretically. Measurements a re reported for magnetic fields directed both perpendicular and parall el to the SL axis and taking values up to 42 T. In the case of an in-p lane magnetic field, two threshold fields B-1 and B-2 are defined. The lower field B-1, which is measured experimentally, corresponds to the field at which resonance between the minibands of neighboring SL quan tum wells (QW's) is destroyed. The higher field B-2 corresponds to the field at which the carriers remain completely localized within the QW . A theoretical model is used to analyze these results by approximatin g the SL potential to delta-function-type barriers. The measured and c alculated values of B-1 are found to be in a good agreement with each other.