I. Shtrichman et al., OPTICAL-PROPERTIES OF GAAS ALXGA1-XAS QUANTUM-WELLS DISORDERED BY ION-IMPLANTATION/, Physical review. B, Condensed matter, 56(3), 1997, pp. 1509-1515
Photoluminescence, photoluminescence excitation, and time-resolved opt
ical spectroscopy are used to study ion-induced disordered GaAs/AlxGa1
-xAs quantum wells. The experimental data are used to quantify the str
uctural modifications of the implanted quantum wells after they are th
ermally annealed. We show that a finite density of nonradiative traps,
associated with the Al atoms which diffused into the GaAs quantum wel
l during the annealing process, is responsible for the quantum wells'
photoluminescence quenching. We use a simple vacancy controlled diffus
ion mechanism to model the ion-induced structural modification and its
dose dependence. Our model explains the ratio between the interface d
iffusion length (similar to 10 Angstrom and the lateral extent of the
intermixing around each traversing ion track (similar to 200 Angstrom)
. It fails, however, to predict the correct dependence of the interfac
e diffusion length on the implantation dose.