COUPLING BETWEEN LO PHONONS AND ELECTRONIC EXCITATIONS OF QUANTUM DOTS

The far-infrared response of self-assembled InxGa1-xAs quantum dots lo cated a distance from a two-dimensional AlxGa1-xAs/GaAs interface has been studied as a function of magnetic field. An avoided crossing at a bout 45 meV, which involves the lowest electronic transition of the do ts, has been observed. Calculations of the interaction between the exc itations of these quantum dots and the LO phonons of the AlxGa1-xAs/Ga As interface have been made, and the resulting splitting has been foun d to be in agreement with the experimental results. The calculated dep endence of the magnitude of the splitting on the separation between th e dots and the nearest interface is consistent with the experimental r esults.