Simulation of 2D quantum effects in ultra-short channel MOSFETs by a finite element method

Authors
Poncet, A Faugeras, C Mouis, M
Citation
A. Poncet et al., Simulation of 2D quantum effects in ultra-short channel MOSFETs by a finite element method, EPJ-APPL PH, 15(2), 2001, pp. 117-121
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
ISSN journal
12860042 → ACNP
Volume
15
Issue
2
Year of publication
2001
Pages
117 - 121
Database
ISI
SICI code
1286-0042(200108)15:2<117:SO2QEI>2.0.ZU;2-G
Abstract
This paper presents a flexible numerical technique which is especially suit ed to analyze lateral modulation of quantum effects in short channel MOS tr ansistors. We discuss boundary conditions for the Schrodinger equation and the impact of the finite element meshing. We show how channel length shorte ning alters the sub-band structure, thus giving an evaluation of the limits of a 1D quantum approach.