Structure and electrical properties of Pb(ZrxTi1-x)O-3 deposited on textured Pt thin films

The texturing of the bottom electrode plays a key role in the structure and electrical properties of Pb(Zr, Ti)O-3 (PZT) thin films. We fabricated Pt bottom electrodes having a different thickness on MgO single crystals at 60 0 degreesC by rf magnetron sputtering. As the thickness of platinum (Pt) th in film increased, the preferred orientation of Pt thin film changed from ( 200) to (111). PZT thin films were fabricated at 450 degreesC by electron c yclotron resonance-plasma enhanced metal organic chemical vapor deposition on the textured Pt thin films. The texturing of the bottom electrode caused drastic changes in the C-V characteristics, P-E characteristics, and fatig ue characteristics of metal/ferroelectric material/metal (MFM) capacitors. The difference of the electrical properties between the PZT thin films havi ng different texturing was discussed in terms-of the x-y alignment and the interface between electrode and PZT in MFM capacitors. (C) 2001 American In stitute of Physics.