Effect of growth temperature on luminescence and structure of self-assembled InAlAs/AlGaAs quantum dots

The effect of growth temperature on the optical properties of self-assemble d In0.65Al0.35As/Al0.35Ga0.65As quantum dots is studied using photoluminesc ence and electroluminescence spectra. With the growth temperature increasin g from 530 to 560 degreesC, the improvement of optical and structural quali ty has been observed. Furthermore, edge-emitting laser diodes with three st acked InAlAs quantum dot layers grown at different temperature are processe d, respectively. For samples with quantum dots grown at 560 degreesC, the c ontinuous wave operation is obtained up to 220 K, which is much higher than that of ones with InAlAs islands grown at 530 degreesC and that of the sho rt-wavelength quantum-dot laser previously reported. (C) 2001 American Inst itute of Physics.