Structural and optical properties of thick (larger than 160 mum) freestandi
ng hydride vapor phase epitaxy GaN templates have been investigated. AFM me
asurements showed that flat and smooth surface could be fabricated. High-re
solution X-ray diffraction studies carried out with different spectrometer
slit for the symmetric and asymmetric diffractions show that the linewidth
increases with increasing slits width. indicating that a considerable degre
e of tilting and twisting of the individual grains are still present in the
se thick samples. Raman scattering measurements performed in a few samples
indicate good crystalline quality and reduced strain. Very sharp and intens
e exciton related lines (FWHM less than I meV) have been observed in the lo
w temperature photoluminescence spectra. Variable-temperature photoluminesc
ence experiments were performed on both the growth surface and interface to
identify the nature of the recombination processes observed in the lumines
cence spectra. FTIR absorption measurements show the presence of at least t
wo donors with binding energy of 30.5 and 33.6 meV. (C) 2001 Elsevier Scien
ce B.V. All rights reserved.