Floating zone growth of silicon in magnetic fields: IV. Rotating magnetic fields

Citation
P. Dold et al., Floating zone growth of silicon in magnetic fields: IV. Rotating magnetic fields, J CRYST GR, 231(1-2), 2001, pp. 95-106
Citations number
33
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
231
Issue
1-2
Year of publication
2001
Pages
95 - 106
Database
ISI
SICI code
0022-0248(200109)231:1-2<95:FZGOSI>2.0.ZU;2-R
Abstract
Transverse rotating magnetic fields (B-max = 7.5 mT, f(rot) = 50 Hz) were a pplied to the floating zone growth of doped silicon. Non-periodic dopant fl uctuations caused by time-dependent thermocapillary convection were conside rably reduced by the rotating field. The radial segregation profiles (measu red by a spreading resistance probe) became more homogeneous and more symme tric. The transition from a regime dominated by time-dependent thermocapill ary convection to a flow state characterized by the rotating magnetic field was determined. This threshold depends on the height of the melt as well a s the melt diameter (crystals between 8 and 14 mm have been investigated) a nd the efficiency of the applied field increases with larger melt zones. Fo r a melt of 14 mm in diameter and an aspect ratio of I it is in the range o f 2.5-3.75 mT/50 Hz (corresponding to a Taylor number of Ta = 9.3 x 10(3) - 2.1 x 10(-4)). The change from a time-dependent 3D-flow without field to a quasi-axisymmetric 2D-flow with the magnetic field is corroborated by numer ical simulations of the flow field: the thermocapillary driven irregular fl ow rolls are transformed to a nearly axisymmetric flow with high azimuthal flow velocities but reduced axial and radial components. (C) 2001 Elsevier Science B.V. All rights reserved.