Re-entrance phase formation of CeSb thin films

Citation
M. Huth et al., Re-entrance phase formation of CeSb thin films, J CRYST GR, 231(1-2), 2001, pp. 203-214
Citations number
33
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
231
Issue
1-2
Year of publication
2001
Pages
203 - 214
Database
ISI
SICI code
0022-0248(200109)231:1-2<203:RPFOCT>2.0.ZU;2-0
Abstract
We report the epitaxial growth of (100)- and (1 1 1)-oriented CeSb thin fil ms on Al2O3 (1 1 2 0) and (0 0 0 1) substrates by means of molecular beam e pitaxy. Depending on the overall Sb-to-Ce flux ratio and the molecular stat e of Sb,,, we observe a re-entrance behavior in the phase formation and ori entation of CeSb on Al2O3 (1 1 2 0). This behavior is shown to exhibit, in some respect, similarities to III-V compound growth, but also more complexi ties due to the instability of the rare earth component against oxidation. A geometric orientation selection model is suggested which reproduces the o bserved re-entrance behavior as well as the overall CeSb growth rate. (C) 2 001 Elsevier Science B.V. All rights reserved.