Atomic layer deposition of zirconium oxide from zirconium tetraiodide, water and hydrogen peroxide

ZrO2 films were grown on Si and SiO2 substrates in the temperature range of 250-500 degreesC using atomic layer deposition (ALD) technique. ZrI4 and H 2O-H2O2 solution were used as metal and oxygen precursors. The refractive i ndex of the 50-125 nm thick films, measured at 580 nm wavelength, varied be tween 2.05 and 2.25 slightly decreasing with increasing growth temperature. The film growth rate also decreased with the increase in temperature. The films contained cubic and/or tetragonal ZrO2 phases. The cubic phase was pr eferentially formed at relatively low deposition temperatures and in the be ginning of the growth process. In addition, monoclinic ZrO2 was detected in the films thicker than 40-50 nm. (C) 2001 Elsevier Science B.V. All rights reserved.