Highly (111)-oriented and conformal iridium films by liquid source metalorganic chemical vapor deposition

Citation
J. Goswami et al., Highly (111)-oriented and conformal iridium films by liquid source metalorganic chemical vapor deposition, J MATER RES, 16(8), 2001, pp. 2192-2195
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS RESEARCH
ISSN journal
08842914 → ACNP
Volume
16
Issue
8
Year of publication
2001
Pages
2192 - 2195
Database
ISI
SICI code
0884-2914(200108)16:8<2192:H(ACIF>2.0.ZU;2-R
Abstract
Highly (111)-oriented and conformal iridium (It) films were deposited by a liquid source metalorganic-chemical-vapor-deposition process on various sub strates. An oxygen-assisted pyrolysis of (methylcyclopentadienyl) (1,5-cycl ooctadiene) Ir precursor at a wide range of substrate temperatures (T-sub) between 300 and 700 degreesC was used. At a low T-sub of 350 degreesC, the randomly oriented polycrystalline films exhibited an I-111/I-200 x-ray inte nsity ratio of 6. However, the films deposited at T-sub = 700 degreesC on n ative SiO2 and amorphous SiO2 surfaces were highly oriented with the I-111/ I-200 ratios of 277 and 186, respectively. The transmission electron micros copy study revealed continuous, dense, and faceted microstructures of Ir fi lms. Also, the step coverage of Ir on TiN (64%) was higher than that on amo rphous SiO2 (50%) surfaces.