Precursor scavenging of the resistive grain-boundary phase in 8 mol% yttria-stabilized zirconia: Effect of trace concentrations of SiO2

Authors
Lee, JH Mori, T Li, JG Ikegami, T Drennan, J Kim, DY
Citation
Jh. Lee et al., Precursor scavenging of the resistive grain-boundary phase in 8 mol% yttria-stabilized zirconia: Effect of trace concentrations of SiO2, J MATER RES, 16(8), 2001, pp. 2377-2383
Citations number
24
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS RESEARCH
ISSN journal
08842914 → ACNP
Volume
16
Issue
8
Year of publication
2001
Pages
2377 - 2383
Database
ISI
SICI code
0884-2914(200108)16:8<2377:PSOTRG>2.0.ZU;2-2
Abstract
The influence that trace concentrations Of SiO2 have on improving grain-bou ndary conduction via precursor scavenging using additional heat treatment a t 1200 degreesC for 40 h before sintering was investigated. At a SiO2-impur ity level (SIL) less than or equal to 160 ppm by weight, the grain-boundary resistivity (p(gb)) decreased to 20% of its value, while no improvement in grain-boundary conduction was found at a SIL greater than or equal to 310 ppm. The correlation between the resistance per unit grain-boundary area, p (gb), and average grain size indicated that the inhomogeneous distribution of the siliceous phase in the sample with a SIL greater than or equal to 31 0 ppm. hampered the scavenging reaction.