Silicon fusion bond interfaces resilient to wet anisotropic etchants

The bond interface in silicon microsystems is sensitive to the subjection t o wet anisotropic etchants. Fusion bond interfaces of bonded wafers resilie nt to potassium hydroxide or tetramethyl ammonium hydroxide etching are obt ained using wafers of oxidized silicon bonded to oxidized silicon, where th e bond oxide is removed by trifluoromethane plasma etching. Other investiga ted bond configurations initiate severe damages during etching.