Oxidation of H-covered flat and vicinal Si(111)-1x1 surfaces

Authors
Zhang, X Chabal, YJ Christman, SB Chaban, EE Garfunkel, E
Citation
X. Zhang et al., Oxidation of H-covered flat and vicinal Si(111)-1x1 surfaces, J VAC SCI A, 19(4), 2001, pp. 1725-1729
Citations number
24
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
07342101 → ACNP
Volume
19
Issue
4
Year of publication
2001
Part
2
Pages
1725 - 1729
Database
ISI
SICI code
0734-2101(200107/08)19:4<1725:OOHFAV>2.0.ZU;2-Y
Abstract
The initial stages Of O-2 oxidation of H-passivated flat and vicinal Si(1 1 1) surfaces are investigated by monitoring the Si-H stretch vibrations wit h infrared absorption spectroscopy. We find that the incorporation of oxyge n into silicon is activated (1.66 +/-0.10 CV on flat surfaces), involving a multistep process. Oxygen molecules are incorporated into Si-Si bonds with out removing surface hydrogen and this process is facilitated at steps. (C) 2001 American Vacuum Society.