Oxide phosphor thin-film electroluminescent devices fabricated by magnetron sputtering with rapid thermal annealing

A procedure for producing high-luminance thin-film electroluminescent (TFEL ) devices with an oxide phosphor thin-film emitting layer prepared without high-temperature postannealing is described. The TFEL devices were fabricat ed by depositing an oxide phosphor thin film onto a thick BaTiO3 ceramic sh eet insulator using magnetron sputtering and in situ rapid thermal annealin g (RTA). The oxide phosphor thin films were deposited by rf magnetron sputt ering onto an insulating ceramic sheet mounted on a rotating platform; a th in film was deposited onto the ceramic sheet when it passed over the target , and subsequent in situ RTA was performed on the deposited film when it pa ssed over the halogen lamps. High-luminance green emissions were obtained i n TFEL devices using either a Ga2O3:Mn or a ZnGa2O4:Mn thin-film emitting l ayer prepared under optimized deposition conditions. A ZnGa2O4:Mn TFEL devi ce driven at 1 kHz exhibited a luminance of 200 cd/m(2). (C) 2001 American Vacuum Society.