Reactive magnetron sputter-deposition of NbN and (Nb,Ti)N films related tosputtering source characterization and optimization

Citation
Nn. Iosad et al., Reactive magnetron sputter-deposition of NbN and (Nb,Ti)N films related tosputtering source characterization and optimization, J VAC SCI A, 19(4), 2001, pp. 1840-1845
Citations number
24
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
07342101 → ACNP
Volume
19
Issue
4
Year of publication
2001
Part
2
Pages
1840 - 1845
Database
ISI
SICI code
0734-2101(200107/08)19:4<1840:RMSONA>2.0.ZU;2-A
Abstract
We compare the properties of planar single track balanced and unbalanced sp uttering sources by comparing the film properties of NbN and (Nb,Ti)N films sputtered from each source. Our experiments show that reducing the effecti veness of the magnetic trap by changing the magnet configuration is equival ent to reducing the sputtering pressure. We also examine the behavior of th e sputtering sources throughout the target lifetime. The balanced sputterin g source shows an increase in the magnetic trap effectiveness and a reducti on in the heat flux towards the substrate surface as the target becomes gro oved (for the fixed applied power and gas pressure), while the unbalanced d esign shows the opposite behavior. We also show that it is possible to opti mize the configuration of the magnetron magnets to produce stable and repro ducible (Nb, Ti)N films under the same gas pressure and applied power throu ghout the target lifetime. (C) 2001 American Vacuum Society.