Adatom assisted stabilization of ad dimers on Ge(001)

Authors
Zoethout, E Zandvliet, HJW Poelsema, B
Citation
E. Zoethout et al., Adatom assisted stabilization of ad dimers on Ge(001), J VAC SCI A, 19(4), 2001, pp. 1868-1870
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
07342101 → ACNP
Volume
19
Issue
4
Year of publication
2001
Part
2
Pages
1868 - 1870
Database
ISI
SICI code
0734-2101(200107/08)19:4<1868:AASOAD>2.0.ZU;2-G
Abstract
The early stage of silicon heteroepitaxial growth and germanium homoepitaxi al growth on Ge(001) has caused a discrepancy between experimental and theo retical work. Previously a dimer configuration was identified experimentall y, which theoretically has been predicted to be unfavorable: the D dimer. U pon careful reinvestigation this cluster turns out to be not a two-atom, bu t a three-atom cluster. The three-atom cluster of Ge or Si on Ge(001) is sh own to differ from a C dimer, a small epitaxial island (BD) or the three-at om cluster of Si on Si(001). (C) 2001 American Vacuum Society.